F1T1G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated Fast Recovery Rectifiers

F1T1G thru F1T7G
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated Fast Recovery Rectifiers
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TS-1
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.2g (approximately)
TS-1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
F1T F1T F1T F1T F1T F1T F1T
SYMBOL
1G 2G 3G 4G 5G 6G 7G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
R_θJA
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.3
5
150
150
250
500
15
90
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1505007
Version: G14