F1T1G_1 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 1.0 AMP. Glass Passivated Fast Recovery Rectifiers

F1T1G - F1T7G
1.0 AMP. Glass Passivated Fast Recovery Rectifiers
TS-1
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, Lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260 ^oC /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Mounting position: Any
Weight: 0.20 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol ^{F1T F1T F1T F1T F1T}
1G 2G 3G 4G 5G
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 200 400 600
Maximum RMS Voltage
V_RMS 35 70 140 280 420
Maximum DC Blocking Voltage
V_DC 50 100 200 400 600
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
I_(AV)
1.0
@TA = 55 ^oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load I_FSM
30
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
V_F
1.3
Maximum DC Reverse Current @ TA=25 ^oC
at Rated DC Blocking Voltage @ TA=125 ^oC
I_R
5.0
150
Maximum Reverse Recovery Time ( Note 1 ) Trr
150
250
Typical Junction Capacitance ( Note 2 )
Cj
15
Typical Thermal Resistance (Note 3)
R_θJA
90
Operating Temperature Range TJ
TJ
-65 to +150
Storage Temperature Range TSTG
TSTG
-65 to +150
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4. 0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
F1T F1T _Units
6G 7G
800 1000 V
560 700 V
800 1000 V
A
A
V
uA
uA
500
nS
pF
o_C/W
o_C
o_C
Version: A06