ES2D-T Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 2A, 200V - 600V Surface Mount Super Fast Rectifiers

ES2D-T - ES2J-T
Taiwan Semiconductor
CREAT BY ART
2A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Super fast recovery time for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.09 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL ES2D-T
ES2G-T
ES2J-T
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@2A
V_F
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
I_R
Maximum reverse recovery time (Note 2)
t_rr
Typical junction capacitance (Note 3)
C_J
Typical thermal resistance
R_θJL
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
ES2D
200
140
200
ES2G
400
280
400
2
50
ES2J
600
420
600
0.95
1.3
1.7
10
350
35
25
20
20
75
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D0000149
Version: A15