ES1DFL Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1A, 200V - 600V Surface Mount Super Fast Rectifiers

ES1DFL - ES1JFL
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICALW DATA
Case: SOD-123FL
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.016 g (approximately)
SOD-123FL
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
ES1DFL
ES1GFL
Marking Code
EDF
EGF
Maximum repetitive peak reverse voltage
V_RRM
200
400
Maximum RMS voltage
V_RMS
140
280
Maximum DC blocking voltage
V_DC
200
400
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated V_R
Typical junction capacitance (Note 2)
T_J=25°C
T_J=125°C
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
C_J
t_rr
R_θJL
R_θJA
T_J
T_STG
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
1.00
1.30
5
100
8
35
35
85
- 55 to +150
- 55 to +150
ES1JFL
EJF
600
420
600
1.70
UNIT
V
V
V
A
A
V
μA
pF
ns
°C/W
°C
°C
Document Number: DS_D0000120
Version: A15