ES1D-T Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1A, 200V - 600V Surface Mount Super Fast Rectifiers

ES1D-T - ES1J-T
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Super fast recovery time for high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL ES1D-T
ES1G-T
ES1J-T
Marking code
ES1D
ES1G
ES1J
Maximum repetitive peak reverse voltage
V_RRM
200
400
600
Maximum RMS voltage
V_RMS
140
280
420
Maximum DC blocking voltage
V_DC
200
400
600
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_R
t_rr
C_J
R_θJL
R_θJA
T_J
T_STG
Note 2: Reverse recovery time test conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and applied V_R=4.0 V
0.95
1.3
1.7
5
100
35
16
18
35
85
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Version: B1511