DTA114TM Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

DTA114 TM/TE/TUA/TCA/TSA
PNP Digital Transistor
Small Signal Diode
Features
Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistor
(see equivalent circuit).
The bias resistors consist of thin -film resistors with
complete isolation to allow negative biasing of the
input.They also have the advantage of almost
completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation,marking device design easy.
 Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code.
Ordering Information
1
2
Package Part No.
Packing
Marking
SOT-723 DTA114 TM 8K / 7" Reel
94
SOT-523 DTA114 TE 3K / 7" Reel
94
SOT-323 DTA114 TUA 3K / 7" Reel
94
SOT-23 DTA114 TCA 3K / 7" Reel
94
TO-92S DTA114 TSA 3K / 7" Reel
123
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Power Dissipation
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
Symbol
PD
V_CBO
V_CEO
V_EBO
I_C
TJ, T_STG
TM _TE
100 150
Notes:1. Valid provided that electrodes are kept at ambient temperature
3
SOT-723/SOT-523
SOT-323/SOT-23
1.IN
2.GND
3.OUT
TO-92S
1.GND
2.OUT
3.IN
Value
TUA TCA
200
-50
-50
-5
-100
-55 to + 150
TSA
Units
300
mW
V
V
mA
°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
Min
-50
-50
-5
Typ
Max
-0.5
Condtion
Ic=-50µA,I_E=0
Ic=-1mA,I_B=0
I_E=-50µA,I_C=0
V_CB=-50V,I_E=0
I_EBO
-0.5
V_EB=-4V,I_C=0
V_CE(sat)
h_FE
R₁
f_T
100
7
-0.3
250 600
10 13
I_C=-10mA,I_B=-1mA
V_CE=-5V,I_C=-1mA
250
V_CE=-10V,I_E=-5mA, f=100MHz
Unit
V
V
V
μA
μA
V
KΩ
MHz
Version:B12