BYG23M Datasheet, PDF (1/3 Pages) Vishay Siliconix – Fast Silicon Mesa SMD Rectifier

CREAT BY ART
High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip.
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
BYG23M
Taiwan Semiconductor
MECHANICAL DATA
Case：DO-214AC(SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity：Indicated by cathode band
Weight：0.064 gram (approximately)
DO-214AC(SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
BYG23M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forward voltage (Note 1)
@ 1.5 A
V_F
Maximum reverse current @ rated VR T_J=25 ℃
T_J=100℃
I_R
T_J=125 ℃
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ) T_A=25℃, L=120mH
E_RSM
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
R_θJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
T_J
T_STG
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts.
1000
700
1000
1
30
1.7
5
50
150
20
75
15
70
- 55 to + 150
- 55 to + 150
UNIT
V
V
V
A
A
V
μA
mJ
nS
pF
O_C/W
O_C
O_C
Document Number：DS_D1309034
Version:A13