BYG20D_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 1.5A, 200V - 600V High Efficient Surface Mount Rectifiers

BYG20D - BYG20J
Taiwan Semiconductor
CREAT BY ART
1.5A, 200V - 600V High Efficient Surface Mount Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Fast switching for high efficiency
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.064 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL BYG20D BYG20G BYG20J
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
200
400
600
V_RMS
140
280
420
V_DC
200
400
600
I_F(AV)
1.5
I_FSM
30
Maximum instantaneous forward voltage
(Note 1)
I_F=1.0A
I_F=1.5A
V_F
1.3
1.4
Maximum reverse current @ rated V_R
T_J=25°C
T_J=100°C
I_R
1
10
Pulse energy in avalanche mode, non repetitive
(Inductive load switch off ), L=120mH
E_RSM
20
Maximum reverse recovery time (Note 2)
t_rr
Typical thermal resistance
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
75
100
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
mJ
ns
°C/W
°C
°C
Document Number: DS_D0000075
Version: C15