BC846A_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – NPN Small Signal Transistor

Small Signal Product
BC846A/B, BC847A/B/C, BC848A/B/C
Taiwan Semiconductor
NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.008gram (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
BC846
Collector-Base Voltage
BC847
BC848
BC846
Collector-Emitter Voltage
BC847
BC848
BC846
Emitter-Base Voltage
BC847
BC848
Collector Current
Junction and Storage Temperature Range
Notes: 1. Valid provided that electrodes are kept at ambient temperature
P_D
V_CBO
V_CEO
V_EBO
I_C
T_J , T_STG
200
80
50
30
65
45
30
6
6
5
0.1
-55 to + 150
UNIT
mW
V
V
V
A
°C
PARAMETER
BC846
Collector-Base Breakdown Voltage
BC847
BC848
BC846
Collector-Emitter Breakdown Voltage
BC847
BC848
BC846
Emitter-Base Breakdown Voltage
BC847
BC848
Collector Cut-off Current
Emitter Cut-off Current
BC846A, BC847A, BC848A
DC Current Gain
BC846B, BC847B, BC848B
BC847C, BC848C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
V_CE= 5V
SYMBOL
I_C= 10μA I_E= 0
V_(BR)CBO
I_C= 10mA I_B= 0
V_(BR)CEO
I_E= 1μA I_C= 0
V_(BR)EBO
V_CB= 30V
V_EB= 5 V
I_E= 0
I_C=0
I_CBO
I_EBO
V_CE= 5V I_C= 2mA
h_FE
I_C= 100mA I_B= 5mA
I_C= 100mA I_B= 5mA
I_C= 10 mA f= 100MHz
V_CE(sat)
V_BE(sat)
f_T
MIN
80
50
30
65
45
30
6
6
5
-
-
110
200
420
-
-
100
MAX
-
-
-
100
0.1
220
450
800
0.5
1.1
-
UNIT
V
V
V
nA
μA
V
V
MHz
Document Number: DS_S1404004
Version: G14