BC817-16_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 300mW, NPN Small Signal Transistor

Small Signal Product
BC817-16/-25/-40
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
P_D
300
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
45
Emitter-Base Voltage
V_EBO
5
Collector Current
I_C
500
Thermal Resistance (Junction to Ambient)
R_θJA
417
Junction Temperature
T_J
150
Storage Temperature Range
T_STG
-55 to +150
Notes: 1. Valid provided that electrodes are kept at ambient temperature
UNIT
mW
V
V
V
mA
°C
°C
°C
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V_CE= 5V
Junction Capacitance
DC Current Gain
DC Current Gain
Min. DC Current Gain
I_C= 10μA
I_C= 10mA
I_E= 1μA
V_CB= 45V
V_EB= 4V
I_C= 500mA
I_C= 500mA
I_C= 10mA
V_CB=10V
V_CE= 1V
V_CE= 1V
I_E= 0
I_B= 0
I_C= 0
I_E= 0
I_C= 0
I_B= 50 mA
I_B= 50 mA
f= 100MHz
f= 1.0MHz
I_C= 100mA
I_C= 100mA
Vce=1V Ic=500mA
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
f_T
C_CBO
h_FE
h_FE
h_FE
BC817-16 BC817-25 BC817-40
50
45
5
0.1
0.1
0.7
1.2
100
10
100
400
600
>40
160
250
100-250 160-400 250-600
40
UNIT
V
V
V
μA
μA
V
V
MHz
pF
Document Number: DS_S1404005
Version: H15