BC817-16_10 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 300mW, NPN Small Signal Transistor

Small Signal Diode
3.
3
2
1.
BC817-16/-25/40
300mW, NPN Small Signal Transistor
SOT-23
A
F
1
2.
Features
—Low power loss, high current capability, low V_F
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOT- 23 small outline plastic package
—Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.008gram (approximately)
B
E
C
D
G
H
Dimensions
A
B
C
D
E
F
G
H
Unit (mm)
Unit (inch)
Min Max Min Max
2.80 3.00
1.20 1.40
0.30 0.50
1.80 2.00
2.25 2.55
0.90 1.20
0.550 REF
0.08 0.19
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.047
0.022 REF
0.003 0.007
Ordering Information
Part No.
Packing
Code
Package
Packing
BC817-16/-25/-40 RF SOT-23 3K / 7" Reel
BC817-16/-25/-40 RFG SOT-23 3K / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Reistance (Junction to Ambient)
Junction Temperature
Storage Temperature Range
Symbol
PD
V_CBO
V_CEO
V_EBO
IC
RθJA
TJ
T_STG
Suggested PAD Layout
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
Value
300
50
45
5
500
388
150
-55 to + 150
Units
mW
V
V
V
mA
°C
°C
°C
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
V_CE= 5V
Junction Capacitance
DC current gain
DC current gain
I_C= 10μA
I_C= 10mA
I_E= 1μA
I_CB= 45V
V_EB= 4V
I_C= 500mA
I_C= 500mA
I_C= 10mA
V_R= 0V
V_CE= 1V
V_CE= 1V
I_E=0
I_B=0
I_C=0
I_E=0
I_C=0
I_B=50mA
I_B=50mA
f=100MHz
f=1.0MHz
I_C= 100mA
I_C= 100mA
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
f_T
C_J
h_FE
h_FE
BC817-16
100
>40
100-250
BC817-25
50
45
5
0.1
0.1
0.7
1.2
100
10
-
>40
160-400
BC817-40
600
>40
250-600
Units
V
V
V
μA
μA
V
V
MHz
pF
Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application.
Version : F10