BC817-16W Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor (For general AF applications High collector current High current gain)

Small Signal Diode
3 Collector
1 Base 2 Emitter
Features
—Epitaxial planar die construction
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOT-323 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.005gram (approximately)
Ordering Information
Package
Part No.
SOT-323 BC817-16W RF
SOT-323 BC817-25W RF
SOT-323 BC817-40W RF
SOT-323 BC817-16W RFG
SOT-323 BC817-25W RFG
SOT-323 BC817-40W RFG
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
6CR
6CS
6CT
6CR
6CS
6CT
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature Range
1)Transistor mounted on an FR4 printed-circuit board.
Symbol
PD
V_CBO
V_CEO
V_EBO
IC
RÓ©JA
TJ, TSTG
BC817-16W/25W/40W
200mW, NPN Small Signal Transistor
SOT-323
A
F
B
E
C
D
Dimensions
A
B
C
D
E
F
Unit (mm)
Min Max
1.90 2.10
1.15 1.35
0.25 0.35
1.20 1.40
2.00 2.20
0.80 1.00
Unit (inch)
Min Max
0.075 0.083
0.045 0.053
0.010 0.014
0.047 0.055
0.079 0.087
0.031 0.039
Suggested PAD Layout
0.65
0.026
0.8
0.031
0.8
0.031
1.6
0.063
Value
200
50
45
5
0.5
625
-65 to + 150
Units
mW
V
V
V
A
k/w
°C
Version : A11