BC807 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP general purpose transistor

Small Signal Product
Features
◇ Ideally suited for automatic insertion
◇ Epitaxial planar die construction
◇ For switching, AF driver and amplifer applications
◇ Complementary NPN type available (BC817)
BC807-16/-25/-40
0.3 Watts, PNP Plastic-Encasulate Transistor
SOT-23
Mechanical Data
◇ Case : SOT- 23, Molded plastic
◇ Case material : Molded plastic, UL flammability
classification rating 94V-0
◇ Moisture sensitivity : Level 1 per J-STD-020C
◇ Terminals : Solderable per MIL-STD-202, method 208
◇ Lead free plating
◇ Marking : -16: 5A, -25: 5B, -40: 5C
◇ Weight : 0.008grams (approximately)
Ordering Information (example)
Part No.
Package
Packing Packing code
BC807-16
SOT-23
3K / 7 " Reel
RF
Note : Detail please see "Ordering Information(detail, example)" below.
Packing code
(Green)
RFG
Manufacture code
B0
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Current - Continuous
I_C = -10 μA
I_C = -10 mA
Power Dissipation
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
I_E = -1 μA
V_CB = -45 V
V_CB = -40 V
V_EB = -4 V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency V_CE = -5 V
I_C = -500 mA
I_C = -500 mA
I_C = -10 mA
Junction Temperature
Storage Temperature Range
I_E = 0
I_B = 0
I_C = 0
I_E = 0
I_B = 0
I_C = 0
I_B = 50 mA
I_B = 50 mA
f = 100 MHz
Symbol
V_CBO
V_CEO
I_C
P_D
V_EBO
I_CBO
I_CEO
I_EBO
V_CE(sat)
V_BE(sat)
f_T
T_J
T_STG
DC Current Gain
Parameter
807-16
807-25
V_CE = -1 V
807-40
I_C = -100 mA
Symbol
h_FE(1)
BC807-16
BC807-25
-50
-45
-0.5
0.3
-5
-0.1
-0.2
-0.1
-0.7
-1.2
100
150
-55 to +150
BC807-40
Units
V
V
A
W
V
μA
μA
μA
V
V
MHz
°C
°C
Min
Max
Units
100
250
160
400
250
600
Version : E13