BC807-16_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 0.3 Watts, PNP Plastic-Encasulate Transistor

BC807-16/-25/-40
Taiwan Semiconductor
Small Signal Product
0.3 Watts, PNP Plastic-Encasulate Transistor
FEATURES
- Ideally suited for automatic insertion
- Epitaxial planar die construction
- For switching, AF driver and amplifer applications
- Complementary NPN type available (BC817)
MECHANICAL DATA
- Case: SOT- 23, Molded plastic
- Terminal: Solderable per MIL-STD-202, method 208
- Case material: Molded plastic, UL flammability
classification rating 94V-0
- Moisture sensitivity: Level 1 per J-STD-020C
- Lead free plating
- Weight: 0.008grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
P_D
I_C
T_J
T_STG
0.3
-0.5
150
-55 to + 150
UNIT
W
A
°C
°C
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
807-16
I_C = -10 µA I_E = 0
I_C = -10 mA I_B = 0
I_E = -1 µA I_C = 0
V_CB = -45 V I_E = 0
V_CB = -40 V I_B = 0
V_EB = -4 V I_C = 0
at I_C = -500mA
I_B = 50 mA
at I_C = -500 mA I_B = 50 mA
V_CE = -5 V I_C = -10 mA f = 50MHz
V_CBO
V_CEO
V_EBO
I_CBO
I_EBO
V_CE(sat)
V_BE(sat)
f_T
DC Current Gain
807-25
807-40
V_CE = -1 V I_C = -100 mA h_FE(1)
VALUE
-50
-45
-5
-0.1
-0.2
-0.1
-0.7
-1.2
80
100
250
160
400
250
600
UNIT
V
V
V
µA
µA
µA
V
V
MHz
Document Number: DS_S1404007
Version: F14