BC807-16W Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor (For general AF applications High collector current High current gain)

Small Signal Product
BC807-16W/-25W/-40W
Taiwan Semiconductor
200mW, PNP Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: SOT- 323 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 0.005 grams (approximately)
SOT-323
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature Range
Notes: 1. Transistor mounted on a FR4 printed-circuit board
P_D
V_CBO
V_CEO
V_EBO
I_C
R_θJA
T_J , T_STG
200
50
45
5
0.5
625
-55 to + 150
UNIT
mW
V
V
V
A
K/W
°C
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
at -I_C = 10 µA
Collector-Emitter Breakdown Voltage
at -I_C = 10 mA
Emitter-Base Breakdown Voltage
at -I_E = 10 µA
Collector Cut-off Current
at V_CB = 20 V
at V_CB = 20 V , T_J = 150 ^oC
Emitter Cut-off Current
at V_EB = 5 V
Collector-Emitter Saturation Voltage
at -I_C = 500mA I_B = 50 mA
Transition Frequency
V_CE = 5 V I_C = 10 mA f = 100MHz
at -V_CE = 1 V , -I_C = 100 mA
-16W
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
f_T
DC Current Gain
-25W
h_FE
-40W
at -V_CE = 1 V , -I_C = 500 mA
MIN
50
45
5
-
-
-
80
100
160
250
40
MAX
-
-
-
100
5
100
0.7
-
250
400
600
UNIT
V
V
V
nA
µA
nA
V
MHz
Document Number: DS_S1404006
Version: B14