BC546A Datasheet, PDF (1/5 Pages) Micro Commercial Components – NPN Silicon Amplifier Transistor 625mW

Small Signal Product
NPN Transistor
BC546A/B/C ~ BC550A/B/C
Taiwan Semiconductor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups A, B
and C according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
P_TOT
V_CBO
V_CEO
V_EBO
I_C
I_CM
T_J , T_STG
500
80
50
30
65
45
30
6
6
6
100
200
-65 to + 150
UNIT
mW
V
V
V
mA
mA
°C
PARAMETER
SYMBOL
BC546
Collector-Base Breakdown Voltage
BC547, BC550
I_C= 100μA V_(BR)CBO
BC548, BC549
BC546
Collector-Emitter Breakdown Voltage
BC547, BC550
I_C= 10mA V_(BR)CEO
BC548, BC549
BC546
Emitter-Base Breakdown Voltage
BC547, BC550
I_E= 100μA V_(BR)EBO
BC548, BC549
Collector Base Cutoff Current
Emitter Base Cutoff Current
DC Current Gain
V_CB= 30V
I_CBO
V_EB= 5 V
I_EBO
Current Gain Group: A
B
V_CE= 5V,
I_C= 2mA
h_FE
C
MIN
80
50
30
65
45
30
6
6
6
-
-
110
200
420
MAX
-
-
-
15
100
220
450
800
UNIT
V
V
V
nA
nA
V
Document Number: DS_S1405001
Version: B14