BC337-16 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Small Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications
- These types are subdivided into three groups -16, -25 and -40, according to their current gain
- Moisture sensitivity level 1
- Driver transistor
- Pb free and RoHS complian
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Junction and Storage Temperature Range
BC337
BC338
BC337
BC338
BC337
BC338
P_TOT
V_CBO
V_CEO
V_EBO
I_C
I_CM
T_J , T_STG
625
50
30
45
25
5
5
800
1000
-55 to +150
PARAMETER
BC337
Collector-Base Breakdown Voltage
BC338
I_C= 100μA
BC337
Collector-Emitter Breakdown Voltage
BC338
I_C= 2mA
Emitter-Base Breakdown Voltage
BC337
BC338
I_E= 100μA
Collector Base Cutoff Current
BC337
BC338
Collector Emitter Saturation Voltage
Base Emitter On Voltage
V_CB=50V
V_CB=30V
I_C=500mA, I_B=50mA
V_CE=1V, I_C=300mA
Transition Frequency
V_CE=5V, I_C=10mA,
f=50MHz
Output Capacitance
DC Current Gain
V_CB=10V, f=1MHz
Current Gain Group: -16
-25
V_CE= 5V,
I_C= 100mA
-40
V_CE= 5V,
I_C= 300mA
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
V_CE(sat)
V_BE(on)
f_T
C_ob
h_FE
MIN
50
30
45
25
5
5
-
-
-
-
100
12
100
160
250
60
MAX
-
-
-
100
100
0.7
1.2
-
-
250
400
630
-
UNIT
mW
V
V
V
mA
mA
°C
UNIT
V
V
V
nA
V
V
MHz
pF
V
Document Number: DS_S1407004
Version: B14