BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Pb RoHS
COMPLIANCE
BAW56/BAV70/BAV99
Plastic-Encapsulate Switching Diodes
SOT-23
Features
— Fast switching speed
— Surface mount package ideally suited for
automatic insertion
— For general purpose switching applications
— High conductance
Mechanical Data
— Case: SOT-23, Molded plastic
— Terminals: Solderable per MIIL-STD-202,
Method 208
— Polarity: See diagram
— Marking: BAW56: A1, BAV70: A4,
BAV99: A7
— Weight: 0.008 gram (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings TA=25℃ unless otherwise specified
Type Number
Symbol BAW56/BAV70/BAV99
Reverse Voltage
Forward Current
Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
Electrical Characteristics
V_R
I_F
I_FM(surge)
P_D
R_θJA
T_J
T_STG
70
200
500
225
556
150
-55 to 150
Type Number
Symbol Min
Max
Reverse Breakdown Voltage
Forward Voltage
IR=100uA
IF=1.0mA
IF= 10mA
IF = 50mA
IF=150mA
V_R
70
VF
-
0.715
0.855
1.0
1.25
Reverse Current
VR=70V
IR
2.5
Capacitance between terminals VR=0, f=1.0MHz
Cj
-
1.5
Reverse Recovery Time (Note 1)
trr
-
6.0
Note 1: Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
Units
V
mA
mA
mW
o_C/W
o_C
o_C
Units
V
V
uA
pF
nS
Version: A07