BAV99W Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

CREAT BY ART
Small Signal Product
Features
Fast switching device (Trr<4.0ns)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case：Flat lead SOT-323 small outline plastic package
Terminal：Matte tin plated, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed:260℃/S
Polarity：Indicated by cathode band
Weight：5 mg
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Absolute Maximum Ratings (T_A=25℃)
Parameter
Peak Repetitive Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Peak Forward Surge Current (tp=10ms)
Total Power Dissipation
Thermal Resistance form Junction Ambient
Junction Temperature
Storage Temperature Range
Single Diode Load
Double Diode Load
at t = 1us
at t = 1ms
at t = 1s
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
R_thjA
T_J
T_STG
Characteristics at T_A=25℃
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, Tj = 150℃
at V_R = 75 V, Tj = 150℃
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Revovery Time
at I_F = I_R = 10 mA, I_rr = 0.1 x I_R, R_L = 100 Ω
Symbol
V_F
I_R
C_d
t_rr
BAV99W
Switching Diode Array
SOT-323
Pin Configuration
Value
85
75
150
130
500
4
1
0.5
200
625
150
- 55 to + 150
Max.
0.715
0.855
1
1.25
30
1
30
50
1.5
4
Units
V
V
mA
mA
A
mW
℃/W
O_C
O_C
Units
V
nA
uA
uA
uA
pF
ns
Version：A13