BAV99S_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 250mW High Speed Switching Array

Small Signal Product
BAV99S
Taiwan Semiconductor
250mW High Speed Switching Array
FEATURES
- Fast switching speed
- High reverse breakdown voltage rating
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Case material UL flammability rating 94V-0
- Weight: 8 ± 0.5 mg
- Marking Code: K1
SOT-363
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
85
Repetitive Peak Forward Current
I_FRM
450
Mean Forward Current
I_O
150
Non-Repetitive Peak Forward
Surge Current
Pulse width = 1 μs
Pulse width = 1 s
I_FSM
4.5
0.5
Junction and Storage Temperature Range
T_J , T_STG
-55 to 150
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I_R=2.5μA
I_F=1.0mA
I_F=10mA
I_F=50mA
I_F=100mA
I_F=150mA
@V_R=75V
V_R=0, f=1.0MHz
(Note 1)
SYMBOL
V_(BR)
V_F
I_R
C_J
t_rr
MIN
75
-
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.200
1.250
1.000
1.500
6.000
Note 1 : Reverse recovery test conditions : I_F=I_R=10mA, R_L=100Ω
UNIT
mW
V
mA
mA
A
o_C
UNIT
V
V
μA
pF
ns
Document Number: DS_S1501006
Version: G15