BAV99S Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

Small Signal Diode
Features
—Fast Switching Speed
—High Reverse Breakdown Voltage Rating
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOT-363 small outline plastic package
—Terminal: Matte tin plated, lead free,solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Case material-UL Flammability Rating 94V-0
—Weight : 0.008 qram(approx.)
—Marking Code : K1
Ordering Information
Part No.
SOT-363
SOT-363
Package
BAV99S
BAV99S
Packing Code Packing Marking
3K / 7" Reel
RF
K1
3K / 7" Reel RFG
K1
BAV99S
250mW High Speed Switching Array
SOT-363
J
H
I
Dimensions
A
B
C
D
E
F
G
H
I
J
Unit (mm)
Min Max
1.80 2.00
1.15 1.35
0.15 0.30
1.30 BSC
2.10 BSC
- 1.10
0.42
0.1 BSC
0.25 0.40
0.02 0.10
Unit (inch)
Min Max
0.071 0.079
0.045 0.053
0.006 0.012
0.051 BSC
0.083 BSC
- 0.043
0.017
0.004 BSC
0.010 0.016
0.001 0.004
Pin Configutation
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current(Note1)
Junction and Storage Temperature Range
Notes:1. Pulse Width=1μ sec &1 sec
Symbol
PD
VRRM
IFRM
IO
IFsM
TJ, TSTG
Value
250
85
450
200
4.5
0.5
-65 to + 150
.
.
Units
mW
V
mA
mA
A
°C
Version : B11