BAV99L Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode

Small Signal Product
225mW SMD Switching Diode
FEATURES
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
BAV99L
Taiwan Semiconductor
MECHANICAL DATA
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260^oC/10s
- Weight: 8 mg (approximately)
- Marking code: A7.
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
P_D
225
Peak repetitive reverse voltage
V_RRM
70
Repetitive peak forward current
I_FRM
450
Mean forward current
I_O
200
Non-repetitive peak forward
surge current
Pulse Width=1 s
I_FSM
0.5
Thermal resistance form junction to ambient
Junction and storage temperature range
R_θJA
T_J , T_STG
556
- 55 to + 150
UNIT
mW
V
mA
mA
A
o_C/W
o_C
PARAMETER
Reverse breakdown voltage
I_R = 100 μA
Forward voltage
I_F = 50 mA
I_F = 150 mA
Reverse leakage current
V_R = 70 V
Junction capacitance
V_R = 0 V, f = 1 MHz
Reverse revovery time
I_F = I_R = 10 mA, R_L = 100 Ω, I_RR = 1 mA
SYMBOL
V_(BR)
V_F
I_R
C_J
t_rr
MIN
70
-
-
-
-
-
MAX
-
1.00
1.25
2.50
1.5
6
UNIT
V
V
μA
pF
ns
Document Number: DS_S1502002
Version: A15