BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

Small Signal Diode
Features
—Fast switching speed, High conductance
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case :SOT-23 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed:
—Weight : 0.008gram (approximately)
BAW56, BAV70, BAV99
225mW SMD Switching Diode
SOT-23
A
F
B
C
D
E
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
2.80 3.00
1.20 1.40
0.30 0.50
1.80 2.00
2.25 2.55
0.90 1.20
0.550 REF
Unit (inch)
Min Max
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.043
0.022 REF
BAW56
Ordering Information
BAV70
Part No.
BAXXX RF
Package
SOT-23
Packing
3Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward
Surge Current
(Note 1)
Pulse Width=1 sec
Pulse Width=1 μsec
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IFRM
IO
IFSM
RθJA
TJ, TSTG
Value
225
70
450
200
0.5
2
357
-55 to + 150
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
I_R=
100μA
V(BR)
70
-
Forward Voltage
I_F=
50mA
VF
I_F=
150mA
-
1.00
-
1.25
Reverse Leakage Current
V_R=
70V
IR
-
2.50
Junction Capacitance
V_R=0V, f=1.0MHz
CJ
-
1.5
Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Trr
-
6.0
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
BAV99
Units
mW
V
mA
mA
A
°C/W
°C
Units
V
V
V
μA
pF
ns
Version : D09