BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV70
Dual Surface Mount Switching Diode
Voltage Range
75 Volts
350m Watts Power Dissipation
Features
a Fast switching speed
a Surface mount package ideally suited for
0.020(0.51)
0.015(0.37)
SOT-23
automatic insertion
a For general purpose switching applications
a High conductance
3
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
1
2
Mechanical Data
a Case: SOT-23, Molded plastic
a Terminals: Solderable per MIIL-STD-202,
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
PIN 1
PIN 2
PIN 3
Method 208
a Polarity: See diagram
a Marking: JJ
a Weight: 0.008 gram (approx.)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25+ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
BAV70
Non-Repetitive Peak Reverse Voltage
VRM
100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
75
VR
RMS Reverse Voltage
VR(RMS)
53
Forward Continuous Current (Note 1)
IFM
300
Average Rectifier Output Current (Note 1)
Io
150
Repetitive Peak Forward Current
IFRM
450
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
@ t=1.0S
Power Dissipation (Note 1)
IFSM
Pd
2.0
1.0
350
Thermal Resistance Junction to Ambient Air
(Note 1)
R JA
357
Electrical Characteristics
Type Number
Symbol
Min
Max
Forward Voltage
IF=1.0mA
IF= 10mA
IF = 50mA
VF
IF=150mA
0.715
-
0.855
1.0
1.25
Peak Reverse Current
VR=75V
VR=75V, Tj=150+
VR=25V, TJ=150+
IR
VR=20V
Junction Capacitance VR=0, f=1.0MHz
Cj
Reverse Recovery Time (Note 2)
trr
2.5
-
50
30
25
-
2.0
-
4.0
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100
Units
V
V
V
mA
mA
mA
A
mW
K/W
Units
V
uA
nA
pF
nS
- 162 -