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BAV21W Datasheet, PDF (1/1 Pages) Taiwan Semiconductor Company, Ltd – 410 mW High Voltage SMD Switching Diode
Small Signal Diode
BAV19W/BAV20W/BAV21W
410 mW High Voltage SMD Switching Diode
SOD-123F
B
Features
—These diodes are also available in DO-35,LL34 Package
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : Flat lead SOD-323 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Polarity : Indicated by cathode band
—Weight : 4.85±0.5 mg
C
A
E
F
Dimensions
A
B
C
D
E
F
Unit (mm) Unit (inch)
Min Max Min Max
1.5 1.7 0.059 0.067
3.3 3.7 0.130 0.146
0.5 0.7 0.020 0.028
2.5 2.7 0.098 0.106
0.8 1.0 0.031 0.039
0.05 0.2 0.002 0.008
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse Width= 1 μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IFRM
IO
IFSM
RθJA
TJ, TSTG
Value
410
250
625
200
1.0
375
-65 to + 150
Units
mW
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
Symbol
Min
BAV19W
120
Reverse Breakdown Voltage
BAV20W (Note 2)
V(BR)
200
BAV21W
250
Forward Voltage
IF=
100mA
-
VF
IF=
200mA
-
BAV19W
Reverse Leakage Current
BAV20W (Note 3)
IR
-
BAV21W
Junction Capacitance
VR=0, f=1.0MHz
CJ
Reverse Recovery Time
(Note4)
Trr
Max
Units
-
-
V
-
1.00
V
1.25
100
nA
5.0
pF
50
ns
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IR=100μA
Notes:3. Test Condition : BAV19W @ VR=100V, BAV20W @ VR=150V, BAV21W @ VR=200V
Notes:4. Test Condition : IF=IR=30mA, RL=100Ω, IRR=3mA
Version : C09