BAV19_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – High Voltage Switching Diode

Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Through-hole device type mounting
- Hermetically sealed glasss
- Solder hot dip tin (Sn) lead finish
- All external surfaces are corrosion resistant and
leads are readily solderable
- Packing code with suffix "G" means
Halogen free
MECHANICAL DATA
- Case: DO-35 package
- High temperature soldering guaranteed: 260^oC/10s
- Polarity: Indicated by black cathode band
- Weight: 109 ± 4 mg
DO-35
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
500
Peak Forward Surge ^{Pulse Width = 1 s , Square Wave}
Current
Pulse Width = 1 μs , Square Wave
I_FSM
1
4
Average Forward Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
I_O
R_θJA
T_J , T_STG
200
300
-65 to +200
PARAMETER
BAV19
Reverse Breakdown Voltage
BAV20
I_R = 100 μA
BAV21
Forward Voltage
Reverse Leakage Current
Junction Capacitance
I_F = 100 mA
I_F = 200 mA
BAV19
V_R = 100 V
BAV20
V_R = 150 V
BAV21
V_R = 200 V
V_R = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note 1)
Note 1: Test condition : I_F= I_R= 30mA , R_L=100Ω , I_RR=3mA
SYMBOL
V_(BR)
V_F
I_R
C_J
trr
MIN
120
200
250
-
-
-
-
-
MAX
-
-
-
1.00
1.25
100
5
50
UNIT
mW
A
mA
o_C/W
o_C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412015
Version: D14