BAV19W_15 Datasheet, PDF (1/4 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SOD-123

Small Signal Product
BAV19W/BAV20W/BAV21W
Taiwan Semiconductor
410mW High Voltage SMD Switching Diode
FEATURES
- These diodes are also available in DO-35, LL34 Package
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-123F
MECHANICAL DATA
- Case: Flat lead SOD-123F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.85 ± 0.5mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
P_D
410
V_RRM
250
I_FRM
625
I_O
200
Non-Repetitive Peak Forward
Surge Current
Pulse Width = 1 μs
Pulse Width = 1 s
I_FSM
4
1
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
R_θJA
T_J , T_STG
375
-65 to +150
PARAMETER
SYMBOL
MIN
Reverse Breakdown Voltage
(Note 1)
BAV19W
120
BAV20W
V_(BR)
200
BAV21W
250
Forward Voltage
I_F = 100 mA
I_F = 200 mA
V_F
-
-
BAV19W
Reverse Leakage Current
(Note 2)
BAV20W
I_R
-
BAV21W
Junction Capacitance
V_R = 0 , f = 1.0 MHz
C_J
-
Reverse Recovery Time (Note 3)
t_rr
-
Note 1 : Test condition : I_R= 100μA
Note 2 : Test condition : BAV19W @ V_R=100V, BAV20W @ V_R=150V, BAV21W @ V_R=200V
Note 3 : Test condition : I_F= I_R= 30mA , R_L=100Ω , Irr=3mA
MAX
-
-
-
1
1.25
100
5
50
UNIT
mW
V
mA
mA
A
o_C/W
o_C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1501003
Version: E15