BAT42W_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Surface Mount, Switching Schottky Barrier Diode

Small Signal Product
BAT42W/BAT43W
Taiwan Semiconductor
Surface Mount, Switching Schottky Barrier Diode
FEATURES
- Low forward voltage drop
- Surface mount device type
- Moisture sensitivity level (MSL): 1
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.01 g (approximately)
SOD-123
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
BAT42W
BAT43W
Repetitive Peak Reverse Voltage
V_RRM
Working Peak Reverse Voltage
V_RWM
30
DC Blocking Voltage
V_R
RMS Reverse Voltage
V_R(RMS)
21
Forward Continue Current
(Note 1)
I_FM
200
Repetitive Peak Forward Current
@ t ＜ 1.0s
I_FM
500
Non-Repetitive Peak Forward Surge Current
@ t ＜ 1.0 ms
I_FSM
4
Repetitive Peak Forward Surge Current
I_FRM
500
Power Dissipation
(Note 1)
P_d
200
I_F=200mA
1.0
I_F=2mA
-
0.33
Maximum Forward Voltage
I_F=10mA
V_F
0.40
-
I_F=15mA
-
0.45
Peak Reverse Current
Junction Capacitance
I_F=50mA
@ V_R=25V & T_J=25^oC
I_R
V_R=1V, f=1.0MHz
C_j
0.65
-
500
10
Reverse Recovery Time
(Note 2)
T_rr
5
Thermal Resistance Junction to Ambient Air
(Note 1)
R_θJA
625
Operating Temperature Range
T_J
-55 to +125
Storage Temperature Range
T_STG
-55 to +125
Notes: 1. Valid provided that terminals are kept at ambient temerature.
2. Reverse recovery test conditions : I_F=10mA, I_R=10mA, R_L=100Ω, I_RR=1mA
UNIT
V
V
V
mA
mA
A
mA
mW
V
nA
pF
ns
o_C
o_C
o_C
Document Number: DS_S1412009
Version: E14