BAS85 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

Pb RoHS
COMPLIANCE
Preliminary
BAS85
200mW Hermetically Sealed Glass Fast
Switching Schottky Barrier Diodes
MINI MELF
Features
— Low forward voltage drop
— LL-34( Mini-MELF) package
— Through-Hole device type mounting
— Hermetically sealed glass
— Compression bonded construction
— All external surfaces are corrosion
resistant and terminals are readily
solderable
— RoHS compliant
— Solder Hot Dip Tin (Sn) lead finish
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25^oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Power Dissipation
Pd
200
Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
Electrical Characteristics
V_RRM
V_R
I_F(AV)
I_FSM
T_J
T_STG
30
30
200
4
125
-65 to + 125
Type Number
Symbol Min Typ Max
Breakdown Voltage
I_R=10uA
B_V
30
Reverse Leakage Current
V_R=25V
I_R
Forward Voltage
IF=0.1mA
IF=1.0mA
IF= 10mA
V_F
IF=30mA
IF =100mA
2
0.24
0.32
0.40
0.50
0.80
Reverse Recovery Time (Note 1)
Trr
5
Junction Capacitance V_R=1V, f=1.0MHz
Cj
10
Notes: 1. Reverse Recovery Test Conditions: I_F= I_R =10mA, R_L=100Ω, I_RR=1mA
Units
mW
V
V
mA
A
O_C
O_C
Units
V
uA
V
nS
pF
Version: A08