BAS70_07 Datasheet, PDF (1/2 Pages) Infineon Technologies AG – HiRel Silicon Schottky Diode

BAS70 / -04 / -05 / -06
200m Watts Surface Mount Schottky Barrier Diode
SOT-23
0.020(0.51)
0.015(0.37)
Features
Low turn-on voltage
Fast switching
PN junction guard Ring for transient and ESD
protection
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Marking & Polarity: See diagram
Weight: 0.008 grams
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
BAS70 Marking: 73
BAS70-04 Marking: 74
BAS70-05 Marking: 75
BAS70-06 Marking: 76
Maximum Ratings TA=25 ^oC unless otherwise specified
Type Number
Symbol
BAS70
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
70
V
VR
RMS Reverse Voltage
VR(RMS)
49
V
Forward Continuous Current (Note 1)
IF
70
mA
Non-Repetitive Peak Forward Surge Current
@ t ≦1.0s
IFSM
100
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Electrical Characteristics
R_θJA
T_J
T_STG
625
K/W
-55 to + 125
o_C
-65 to + 150
o_C
Type Number
Symbol
Min
Max
Units
Reverse Breakdown Voltage (Note 2), IR=10uA
V(BR)
70
Reverse Leakage Current tp<300us, VR=50V
IR
_
100
nA
Forward Voltage Drop
tp=300us, IF=1.0mA
tp<300us, IF=15mA
VF
_
Junction Capacitance VR=0, f=1.0MHz
Cj
_
Reverse Recovery Time (Note 3)
trr
_
410
1000
mV
2.0
pF
5.0
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Test Period < 3000uS.
3. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=1.0mA, RL=100Ω.
- 14 -
Version: C07