BAS40_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low VF SMD Schottky Barrier Diode

Small Signal Product
BAS40 / -04 / -05 / -06
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Metal-on-silicon schottky barrier
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260^oC/10s
- Weight: 0.008g (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
40
Reverse Voltage
V_R
40
Repetitive Peak Forward Current
I_FRM
200
Mean Forward Current
I_O
200
Non-Repetitive Peak Forward Surge Current
(Note 1)
I_FSM
0.6
Thermal Resistance (Junction to Ambient)
(Note 2)
R_θJA
357
Junction and Storage Temperature Range
T_J , T_STG
-65 to +125
PARAMETER
SYMBOL
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I_R=10μA
I_F=1mA
I_F=10mA
I_F=40mA
V_R=30V
V_R=1V, f=1.0MHz
I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
V_(BR)
V_F
I_R
C_J
t_rr
Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load
Notes : 2. Valid provided that electrodes are kept at ambient temperature
MIN
40
-
-
-
-
-
-
MAX
-
0.38
0.50
1.00
0.2
5.0
5.0
UNIT
mW
V
V
mA
mA
A
o_C/W
o_C
UNIT
V
V
μA
pF
ns
Document Number: DS_S1412006
Version: F14