BAS40_11 Datasheet, PDF (1/2 Pages) Infineon Technologies AG – HiRel Silicon Schottky Diode

Small Signal Diode
BAS40 / -04 / -05 / -06
200mW, Low VF, ^{SMD Schottky Barrier Diode}
SOT-23
A
F
Features
Metal-on-silicon Shcottky Barrier
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
Case : Flat lead SOT 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Marking Code : 43.44.45.46
C
B
D
E
G
Unit (mm)
Dimensions
Min Max
A
2.80 3.00
B
1.20 1.40
C
0.30 0.50
D
1.80 2.00
E
2.25 2.55
F
0.90 1.20
G
0.550 REF
Unit (inch)
Min Max
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.043
0.022 REF
BAS40
BAS40-04
BAS40-05
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
PD
VRRM
VR
IFRM
IO
IFSM
RθJA
TJ, TSTG
Value
200
40
40
200
200
0.6
357
-65 to + 125
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage IR=
10μA
V(BR)
40
-
IF=
1mA
-
0.38
Forward Voltage
IF=
10mA
VF
IF=
40mA
-
0.50
-
1.00
Reverse Leakage Current
VR=
30V
IR
-
0.2
Junction Capacitance
VR=1V, f=1.0MHz
CJ
-
5
Reverse Recovery Time IF =IR=10mA,RL=100Ω,IRR=1mA
Trr
-
5.0
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
BAS40-06
Units
mW
V
V
mA
mA
A
°C/W
°C
Units
V
V
μA
pF
ns
Version : D11