BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

Small Signal Diode
BAS40 / -04 / -05 / -06
200mW, Low V_F, SMD Schottky Barrier Diode
A
F
Features
—Metal-on-silicon Shcottky Barrier
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : Flat lead SOT 23 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.008gram (approximately)
B
C
D
E
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
2.80 3.00
1.20 1.40
0.30 0.50
1.80 2.00
2.25 2.55
0.90 1.20
0.550 REF
Unit (inch)
Min Max
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.043
0.022 REF
BAS40
BAS40-04
BAS40-05
BAS40-06
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
PD
VRRM
VR
IFRM
IO
IFSM
RθJA
TJ, TSTG
Value
200
40
40
200
200
0.6
357
-65 to + 125
Electrical Characteristics
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage
I_R=
10μA
V(BR)
40
-
I_F=
1mA
-
0.38
Forward Voltage
I_F=
10mA
VF
-
0.50
I_F=
40mA
-
1.00
Reverse Leakage Current
V_R=
30V
IR
-
0.2
Junction Capacitance
V_R=1V, f=1.0MHz
CJ
-
5
Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Trr
-
5.0
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Notes:2. Valid provided that electrodes are kept at ambient temperature
Units
mW
V
V
mA
mA
A
°C/W
°C
Units
V
V
μA
pF
ns
Version : C09