BAS316WS_15 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 200mW High-Speed Switching SMD Diode

Small Signal Product
BAS316WS
Taiwan Semiconductor
200mW High-Speed Switching SMD Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.6 ± 0.5 mg
- Marking Code: W2
SOD-323F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Average Forward Current
P_D
200
I_O
250
Non-Repetitive Peak Forward Surge Current Pulse Width = 1 μs
4.0
Pulse Width = 1 ms
I_FRM
1.0
Operating Junction Temperature
T_J
150
Storage Temperature Range
T_STG
-65 to + 150
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Voltage
Junction Capacitance
Reverse Recovery Time
I_R = 100 μA
I_F = 1.0 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
V_R = 75 V
V_R = 25 V
V_R = 0 , f = 1.0 MHz
I_F = I_R = 10 mA , I_rr = 0.1 × I_R
SYMBOL
V_(BR)
V_F
I_R
C_J
t_rr
MIN
100
-
-
-
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
1
0.03
1.5
4.0
UNIT
mW
mA
A
o_C
o_C
UNIT
V
V
μA
pF
ns
Document Number: DS_S1501001
Version: B15