BAS21_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode

Small Signal Product
225mW SMD Switching Diode
FEATURES
- Fast switching speed
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 8 ± 0.5 mg
SOT-23
BAS21 / A / C / S
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
225
Repetitive Peak Reverse Voltage
V_RRM
250
Repetitive Peak Forward Current
I_FRM
625
Mean Forward Current
I_O
200
Non-Repetitive Peak Forward Surge Current
(Note 1)
I_FSM
1
Thermal Resistance (Junction to Ambient)
(Note 2)
R_θJA
500
Junction and Storage Temperature Range
T_J , T_STG
-55 to +150
Notes : 1. Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) pulse width = 1 μsec
2. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Reverse Breakdown Voltage
I_R = 100 μA
Forward Voltage
I_F = 100 mA
I_F = 200 mA
Reverse Leakage Current
V_R = 200 V
Junction Capacitance
V_R = 1 V , f = 1.0 MHz
Reverse Recovery Time
I_F= I_R= 30mA , R_L= 100Ω , I_RR= 1mA
SYMBOL
V_R(BR)
V_F
I_R
C_J
trr
MIN
250
-
-
-
-
-
MAX
-
1.00
1.25
0.1
5
50
UNIT
mW
V
mA
mA
A
o_C/W
o_C
UNIT
V
V
μA
pF
ns
Document Number: DS_S1412039
Version: D14