BAS21 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT DIODE

Small Signal Diode
Features
—Fast switching speed
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case :SOT-23 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.008gram (approximately)
BAS21 / A / C / S
225mW SMD Switching Diode
SOT-23
A
F
B
C
D
E
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
2.80 3.00
1.20 1.40
0.30 0.50
1.80 2.00
2.25 2.55
0.90 1.20
0.550 REF
Unit (inch)
Min Max
0.110 0.118
0.047 0.055
0.012 0.020
0.071 0.079
0.089 0.100
0.035 0.043
0.022 REF
BAS21
Ordering Information
BAS21S
BAS21C
BAS21A
Part No.
BAS21/A/C/S RF
Package
SOT-23
Packing
3Kpcs/ 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
Symbol
PD
VRRM
IFRM
IO
IFSM
RθJA
TJ, TSTG
Value
225
250
625
200
1
500
-55 to + 150
Units
mW
V
mA
mA
A
°C/W
°C
Electrical Characteristics
Type Number
Symbol
Min
Reverse Breakdown Voltage
I_R=
100μA
V(BR)
250
Forward Voltage
I_F=
100mA
VF
-
I_F=
200mA
-
Reverse Leakage Current
V_R=
200V
IR
-
Junction Capacitance
V_R=1V, f=1.0MHz
CJ
-
Reverse Recovery Time I_F=I_R=10mA, R_L=100Ω, I_RR=1mA
Trr
-
Max
Units
-
V
1.00
V
1.25
V
100
μA
5
pF
50.0
ns
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Pulse Width=1 μsec
Notes:2. Valid provided that electrodes are kept at ambient temperature
Version : B09