BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

BAS19 / BAS20 / BAS21
Surface Mount Fast Switching Diode
Voltage Range
100/150/200 Volts
250m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
BAS19 Marking: A8
BAS20 Marking: A81
BAS21 Marking: A82
Weight: 0.008 gram (approx.)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol BAS19 BAS20 BAS21
Repetitive Peak Reverse Voltage
VRRM
120 200 250
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
100 150 200
RMS Reverse Voltage
VR(RMS)
71
106 141
Forward Continuous Current (Note 1)
IFM
400
Average Rectifier Output Current (Note 1)
Io
200
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
IFSM
2.5
@ t=1.0S
0.5
Repetitive Peak Forward Surge Current
IFRM
625
Power Dissipation (Note 1)
Pd
250
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
RθJA
T_J, T_STG
500
-65 to + 150
Type Number
Symbol
Min
Max
Forward Voltage
IF=100mA
IF= 200mA
VF
-
1.0
1.25
Peak Reverse Current
Tj=25℃
Tj=100℃
IR
Junction Capacitance VR=0, f=1.0MHz
Cj
Reverse Recovery Time (Note 2)
trr
-
100
15
-
5.0
-
50
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
Units
V
V
V
mA
mA
A
mA
mW
K/W
O_C
Units
V
nA
uA
pF
nS
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