BAS16_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode

Small Signal Product
225mW SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Bend lead SOT-23 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight: 8 ± 0.5 mg
- Marking Code: A6
SOT-23
BAS16
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power dissipation
P_D
225
Repetitive peak reverse voltage
V_RRM
75
Mean forward current
I_O
150
Non-repetitive peak forward surge current @ t = 0.001 s
I_FSM
2
Thermal resistance (Junction to Ambient)
(Note 1)
R_θJA
375
Junction and storage temperature range
T_J , T_STG
-65 to +150
PARAMETER
SYMBOL
Reverse breakdown voltage
I_R = 100 μA
I_F = 1.0 mA
V_(BR)
Forward voltage
Reverse leakage current
Junction capacitance
Reverse recovery time
I_F = 10 mA
I_F = 50 mA
V_F
I_F = 150 mA
V_R = 75 V
I_R
V_R = 0 V , f = 1.0 MHz
C_J
(Note 2)
t_rr
Note 1: Valid provided that electrodes are kept at ambient temperature
Note 2: Reverse recovery test conditions: I_F=10mA , I_R=10mA , R_L=100 Ω, I_RR= 1mA
MIN
75
-
-
-
-
MAX
-
0.715
0.855
1.000
1.250
1
2.0
3.0
UNIT
mW
V
mA
A
o_C/W
o_C
UNIT
V
V
μA
pF
ns
Document Number: DS_S1312001
Version: D14