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BAS16_09 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 225mW SMD Switching Diode | |||
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Small Signal Diode
BAS16
225mW SMD Switching Diode
SOT-23
A
F
Features
ÂLow power loss, high current capability, low VF
ÂSurface device type mounting
ÂMoisture sensitivity level 1
ÂMatte Tin(Sn) lead finish with Nickel(Ni) underplate
ÂPb free version and RoHS compliant
ÂGreen compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
ÂCase : SOT- 23 small outline plastic package
ÂTerminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
ÂHigh temperature soldering guaranteed: 260°C/10s
ÂWeight : 0.008gram (approximately)
Ordering Information
B
C
D
E
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
1.50 1.70
3.55 3.85
0.45 0.65
2.60 2.80
1.05 1.25
0.08 0.15
0.02 REF
Unit (inch)
Min Max
0.059 0.067
0.140 0.152
0.018 0.026
0.102 0.11
0.041 0.049
0.003 0.006
0.50 REF
Part No.
BAS116 RF
Package
SOT-23
Packing
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current @ t= 0.001s
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
VRRM
Io
IFSM
RθJA
TJ, TSTG
Value
225
75
150
2
375
-65 to + 150
Electrical Characteristics
Type Number
Symbol
Min
Reverse Breakdown Voltage
IR=
100μA
V(BR)
75
IF=
1.0mA
Forward Voltage
IF=
10mA
VF
-
IF=
50mA
IF=
150mA
Reverse Leakage Current
VR=
75V
IR
-
Junction Capacitance
VR=0, f=1.0MHz
CJ
-
Reverse Recovery Time (Note 2)
Trr
-
Max
-
0.715
0.855
1.0
1.25
1
2.0
6.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=10mA, RL=100Ω, IRR=1mA
Units
mW
V
mA
A
°C/W
°C
Units
V
V
uA
pF
ns
Version : B09
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