BAS16 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Small Signal Diode

BAS16/MMBD4148/MMBD914
Surface Mount Switching Diode
Voltage Range
75 Volts
350m Watts Power Dissipation
Features
Fast switching speed
Surface mount package ideally suited for
automatic insertion
For general purpose switching applications
High conductance
Mechanical Data
Case: SOT-23, Molded plastic
Terminals: Solderable per MIIL-STD-202,
Method 208
Polarity: See diagram
Marking: KA6, KA2, K5D
Weight: 0.008 gram (approx.)
SOT-23
0.020(0.51)
0.015(0.37)
0.055(1.40) 0.098(2.50)
0.047(1.19) 0.083(2.10)
0.080(2.05)
0.070(1.78)
0.024(0.61)
0.018(0.45)
0.120(3.05)
0.104(2.65)
0.041(1.05)
0.047(0.89)
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
0.024(0.61)
0.018(0.45)
0.007(0.178)
0.003(0.076)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Non-Repetitive Peak Reverse Voltage
VRM
100
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
75
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
53
Forward Continuous Current
IFM
300
Average Rectifier Output Current
Io
200
Non-Repetitive Peak Forward Surge Current
@ t=1.0uS
IFSM
2.0
@ t=1.0S
1.0
Power Dissipation (Note 1)
Pd
350
Thermal Resistance Junction to Ambient Air
RθJA
357
Operating and Storage Temperature Range
Electrical Characteristics
TJ, TSTG
-65 to + 150
Type Number
Symbol
Min
Max
Reverse Breakdown Voltage (Note 3) IR=100uA
Forward Voltage
IF=1.0mA
IF= 10mA
IF = 50mA
IF=150mA
V(BR)
VF
75
0.715
-
0.855
1.0
1.25
Peak Reverse Current VR=75V
VR=75V, Tj=150℃
VR=25V, TJ=150℃
IR
VR=20V
Junction Capacitance VR=0, f=1.0MHz
Cj
Reverse Recovery Time (Note 2)
trr
1.0
-
50
30
25
-
2.0
-
4.0
Notes: 1. Device Mounted on Glass Epoxy PCB 1.6”x1.6”x0.06”, Mounting pad for the Cathode
Lead Min. 0.93 inches.
2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100Ω.
Units
V
V
V
mA
mA
A
mW
O_C/W
O_C
Units
V
V
uA
nA
pF
nS
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