BAS116_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode

Small Signal Product
BAS116
Taiwan Semiconductor
225mW, SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with
Nickel (Ni) under plate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 8 mg (approximately)
- Marking Code: JV
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
225
Repetitive Peak Reverse Voltage
V_RRM
75
Mean Forward Current
I_O
200
Non-Repetitive Peak Forward Surge Current @ t = 1.0 s
I_FSM
500
Thermal Resistance (Junction to Ambient) (Note 1)
R_θJA
330
Junction and Storage Temperature Range
T_J , T_STG
-55 to +150
PARAMETER
SYMBOL
Reverse Breakdown Voltage
I_R = 100 μA
V_BR
I_F = 1 mA
Forward Voltage
I_F = 10 mA
I_F = 50 mA
V_F
I_F = 150 mA
Reverse Leakage Current
V_R = 75 V
T_J=25°C
T_J=150°C
I_R
Junction Capacitance
V_R = 0 V , f = 1.0 MHz
C_J
Reverse Recovery Time
(Note 2)
t_rr
Notes : 1. Valid provided that electrodes are kept at ambient temperature
2. Reverse recovery test conditions : I_F=10mA , I_R=10mA , R_L=100 Ω, I_RR= 1mA
MIN
75
-
-
-
-
-
-
-
MAX
-
0.9
1.0
1.1
1.25
5
80
2.0
3.0
UNIT
mW
V
mA
mA
°C/W
°C
UNIT
V
V
nA
pF
ns
Document Number: DS_S1412037
Version: D15