BAS116 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Low-leakage diode

Small Signal Diode
BAS116
225mW SMD Switching Diode
SOT-23
A
F
Features
—Low power loss, high current capability, low VF
—Surface device type mounting
—Moisture sensitivity level 1
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Mechanical Data
—Case : SOT- 23 small outline plastic package
—Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Weight : 0.008gram (approximately)
Ordering Information
B
C
D
E
G
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min Max
1.50 1.70
3.55 3.85
0.45 0.65
2.60 2.80
1.05 1.25
0.08 0.15
0.02 REF
Unit (inch)
Min Max
0.059 0.067
0.140 0.152
0.018 0.026
0.102 0.11
0.041 0.049
0.003 0.006
0.50 REF
Part No.
BAS116 RF
Package
SOT-23
Packing
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Reverse Voltage
Mean Forward Current
Non-Repetitive Peak Forward Surge Current @ t= 1.0s
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
V_RRM
Io
IFSM
RθJA
TJ, TSTG
Value
225
75
200
500
330
-55 to + 150
Electrical Characteristics
Type Number
Symbol
Min
Reverse Breakdown Voltage
I_R=
100µA
V(BR)
75
IF=
1.0mA
-
Forward Voltage
IF=
10mA
-
VF
IF=
50mA
-
IF=
150mA
-
Reverse Leakage Current
V_R=
75V
IR
-
Junction Capacitance
VR=0, f=1.0MHz
CJ
-
Reverse Recovery Time (Note 2)
Trr
-
Max
-
0.9
1.0
1.1
1.25
5
2.0
3.0
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: I_F=10mA, I_R=10mA, R_L=100 I_RR=1mA
Units
mW
V
mA
mA
°C/W
°C
Units
V
V
nA
pF
ns
Version : B09