BA157G_14 Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass Passivated Fast Recovery Rectifiers

BA157G thru BA159G
Taiwan Semiconductor
CREAT BY ART
FEATURES
Glass Passivated Fast Recovery Rectifiers
- Glass passivated chip junction
- High current capability, Low VF
- High reliability
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL BA157G
BA158G
BA159G
Maximum repetitive peak reverse voltage
V_RRM
400
600
1000
Maximum RMS voltage
V_RMS
280
420
700
Maximum DC blocking voltage
V_DC
400
600
1000
Maximum average forward rectified current
I_F(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
30
Maximum instantaneous forward voltage (Note 1)
@1A
V_F
1.2
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
I_R
Maximum reverse recovery time (Note 2)
Trr
Typical junction capacitance (Note 3)
Cj
Typical thermal resistance
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
5
100
150
250
15
60
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
pF
O_C/W
O_C
O_C
Document Number: DS_D1405009
Version: G14