B5817W Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop
- Surface Mounted Device
- Moisture sensitivity level 1
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-123 package
- High temperature soldering guaranteed: 260°C/10s
- Weight: 10mg (approximately)
SOD-123
APPLICATION
Low voltage, high frequency inverters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
B5817W
VALUE
B5818W
B5819W
Non-Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Currect
Peak Forward Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance form Junction to Ambient
Junction Temperature
Storage Temperature Range
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
I_FRM
P_D
R_thjA
T_J
T_STG
20
30
40
20
30
40
20
30
40
20
30
40
14
21
28
1
9
1.5
500
250
125
- 55 to + 150
UNIT
V
V
V
V
V
A
A
A
mW
o_C/W
o_C
o_C
PARAMETER
B5817W
Reverse Breakdown Voltage
B5818W
B5819W
B5817W
Reverse Voltage Leakage Current B5818W
B5819W
B5817W
Forward Voltage
B5818W
Diode Capacitance
B5819W
Document Number: DS_S1404018
TEST CONDITION
at I_R = 1 mA
at V_R = 20 V
at V_R = 30 V
at V_R = 40 V
at I_F = 1A
at I_F = 3A
at I_F = 1A
at I_F = 3A
at I_F = 1A
at I_F = 3A
V_R=4V, f=1.0MHz
SYMBOL
V_(BR)
I_R
V_F
C_D
MIN
20
30
40
--
--
--
--
MAX
UNIT
V
1
mA
0.45
V
0.75
0.55
V
0.875
0.6
V
0.9
120
pF
Version: A14