B0520LWF_14 Datasheet, PDF (1/5 Pages) Taiwan Semiconductor Company, Ltd – Low VF SMD Schottky Barrier Diode

Small Signal Product
B0520LWF,B0530WF,B0540WF
Taiwan Semiconductor
Low VF SMD Schottky Barrier Diode
FEATURES
- Surface device type mounting
- Moisture sensitivity level 1
- Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 8.85 ± 0.5 mg
SOD-123F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL B0520LWF B0530WF B0540WF
Repetitive Peak Reverse Voltage
Reverse Voltage
Mean Forward Current @ T_L=100^oC (Lead Temperature)
Non-Repetitive Peak Forward Surge Current (Note 1)
Thermal Resistance (Junction to Lead)
Thermal Resistance (Junction to Ambient) (Note 2)
V_RRM
V_R
I_O
I_FSM
R_θJL
R_θJA
20
30
40
20
30
40
500
5.5
150
118
340
206
Junction and Storage Temperature Range
T_J , T_STG
-65 to +125
-65 to +150
Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load
Notes: 2. Valid provided that electrodes are kept at ambient temperature
UNIT
V
V
mA
A
o_C/W
o_C
Forward Voltage
Reverse Leakage Current
PARAMETER
I_F= 0.1 A
I_F= 0.5 A
I_F= 1.0 A
I_F= 0.1 A , Ta = 100^oC
I_F= 0.5 A , Ta = 100^oC
I_F= 1.0 A , Ta = 100^oC
V_R = 10V
V_R = 20V
V_R = 10V , Ta = 100^oC
V_R = 20V , Ta = 100^oC
V_R = 15V
V_R = 30V
V_R = 40V
V_R = 40V , Ta = 100^oC
SYMBOL
V_F
I_R
B0520LWF
0.300
0.385
-
0.220
0.330
-
75
250
5
8
-
-
-
-
B0530WF
0.375
0.500
-
-
-
-
-
-
-
-
20
130
-
-
B0540WF
-
0.510
0.620
-
0.460
0.610
-
10
-
5
-
-
20
13
UNIT
V
μA
mA
μA
mA
Document Number: DS_S1412005
Version: C14