ABS6-T Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – Glass passivated junction

CREAT BY ART
FEATURES
Glass Passivated Bridge Rectifiers
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ABS6-T thru ABS10-T
Taiwan Semiconductor
ABS
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Polarity as marked on the body
Weight: 0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
ABS6-T
ABS8-T
Marking code
ABS6
ABS8
Maximum repetitive peak reverse voltage
V_RRM
600
800
Maximum RMS voltage
V_RMS
420
560
Maximum DC blocking voltage
V_DC
600
800
Maximum average forward rectified current
On glass-epoxy
I_F(AV)
0.8
On aluminum substrate
1.0
Peak forward surge current,
8.3 ms single half sine-wave
Peak forward surge current,
1.0 ms single half sine-wave
Rating for fusing (t<8.3ms)
T_J = 25℃
T_J = 125℃
I_FSM
T_J = 25℃
T_J = 125℃
I_FSM
I²t
Maximum instantaneous forward voltage (Note 1)
I_F= 0.4 A
V_F
30
25
60
50
3.74
0.95
Maximum DC reverse current
at rated DC blocking voltage
T_J=25 ℃
T_J=125℃
I_R
10
150
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
R_θJL
R_θJA
T_J
T_STG
25
80
- 55 to +150
- 55 to +150
ABS10-T
ABS10
1000
700
1000
Unit
V
V
V
A
A
A
A²s
V
μA
O_C/W
O_C
O_C
Document Number: DS_D1404019
Version: A14