ABS20M Datasheet, PDF (1/4 Pages) Taiwan Semiconductor Company, Ltd – 2A, 1000V Glass Passivated Bridge Rectifier

ABS20M
Taiwan Semiconductor
CREAT BY ART
2A, 1000V Glass Passivated Bridge Rectifier
FEATURES
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.096 g (approximately)
ABS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL
ABS20M
Maximum repetitive peak reverse voltage
V_RRM
1000
Maximum RMS voltage
V_RMS
700
Maximum DC blocking voltage
V_DC
1000
Maximum average forward rectified current
On glass-epoxy
I_F(AV)
1.6
On aluminum substrate
2.0
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak forward surge current, 1 ms single half
sine-wave superimposed on rated load
Rating for fusing (t<8.3ms)
T_J=25°C
T_J=125°C
Maximum instantaneous forward voltage
(Note 1)
Maximum reverse current @ rated V_R
I_F= 1 A
I_F= 2 A
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
T_J=25°C
T_J=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
I_FSM
I_FSM
I²t
V_F
I_R
R_θJL
R_θJA
T_J
T_STG
50
110
90
10.375
TYP
MAX
0.92
1.02
0.80
-
-
1.10
0.94
-
5
150
30
85
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A²s
V
μA
°C/W
°C
°C
Document Number: DS_D0000106
Version: A15