2SC5658-R_13 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – NPN Transistor

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Small Signal Product
2SC5658-Q/R/S
NPN Transistor
SOT-723
Features
Epitaxial planar die construction
Surface device type mounting
Moisture sensitivity level 1
Low C_ob
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Complements the 2SA2029
Mechanical Data
Case : SOT-723 small outline plastic package
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260℃/10s
Ordering Information (example)
1. BASE
2. EMITTER
3. COLLECTOR
Part No.
2SC5658-Q
Package Packing
SOT-723 8K / 7" Reel
Packing
code
RM
Packing code
(Green)
RMG
Marking
BQ
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Parameter
Symbol
Collector Base Voltage
V_CBO
Collector Emitter Voltage
V_CEO
Emitter Base Voltage
V_EBO
Collector Current
I_C
Collector Dissipation
P_C
Junction Temperature
T_J
Storage Temperature Range
T_STG
Characteristics at T_A=25℃
Parameter
Collector Base Breakdown Voltage at I_C=50uA, I_E=0
Collector Emitter Breakdown Voltage at I_C=1mA, I_B=0
Emitter Base Breakdown Voltage at I_E=50uA, I_C=0
Collector Cutoff Current
at V_CB=60V, I_E=0
Emitter Cutoff Current
at V_EB=7V, I_C=0
DC Current Transfer ratio
at V_CE=6V, I_C=1mA
Collector Emitter Saturation Voltage at I_C=50mA, I_B=5mA
Transition Frequency ^{at V}CE^{=12V, I}C^{=2mA, f=100MHz}
Output Capacitance
at V_CB=12V, f=1MHz
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
60
50
7
-
-
120
-
-
-
Classification of h_FE
Rank
Range
Q
120~270
R
180~390
Limits
60
50
7
150
100
150
- 55 to + 150
Units
V
V
V
mA
mW
O_C
O_C
Typ.
-
-
-
-
-
-
-
180
-
Max.
-
-
-
0.1
0.1
560
0.4
-
3.5
Units
V
V
V
uA
uA
V
MHz
pF
S
270~560
Version：A13