2SA2029-Q Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – PNP Bipolar Transistor

Small Signal Product
PNP Bipolar Transistor
2SA2029-Q/R/S
Taiwan Semiconductor
FEATURES
- Epitaxial planar die construction
- Surface Mount Device Type
- Moisture sensitivity level 1
- For high voltage switcing and amplifier application
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Excellent h_FE linearity
- Complements the 2SC5658
SOT-723
MECHANICAL DATA
- Case: SOT-723 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Weight: 1.27mg +/- 20%
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
-60
-50
-6
-150
150
150
-55 to + 150
UNIT
V
V
V
mA
mW
°C
°C
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Currect
Emitter Cut-Off Currect
DC Current Transfer Ration
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Remark:
Classifiaction of h_FE
Rank
Range
Q
120~270
R
180~390
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
MIN
-60
-50
-6
120
TYP
140
MAX
-0.1
-0.1
560
-0.5
5
TEST CONDITION
I_C=-50μA , I_E=0
I_C=-1mA , I_B=0
I_E=-50μA , I_C=0
V_CB=-60V , I_E=0
V_EB=-6V , I_C=0
V_CB=-6V , I_C=1mA
I_C=-50mA , I_B=-5mA
V_CE=-12V , I_C=2mA , f=30MHz
V_CB=-12V , I_E=0 , f=1MHz
UNIT
V
V
V
μA
μA
V
MHz
pF
S
270~560
Document Number: DS_S1402005
Version: A14