1SS355_14 Datasheet, PDF (1/3 Pages) Taiwan Semiconductor Company, Ltd – 200mW High Speed SMD Switching Diode

Small Signal Product
1SS355
Taiwan Semiconductor
200mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 6 ± 0.5mg
- Marking code: S4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
P_D
200
Repetitive Peak Reverse Voltage
V_RRM
90
Reverse Voltage
V_R
80
Minimum Breakdown Voltage at I_R = 100μA
V_BR
80
Forward Current
I_F
250
Continue Forward Current
I_O
150
Repetitive Peak Forward Voltage
I_FSM
500
Maximum Reverse Leakage Current at V_R = 80V
I_R
100
Maximum Forward Voltage at I_F = 100mA
V_F
1.2
Maximum Reverse Recovery Time
at I_F = 10mA, V_R = 6V, R_L = 100 Ohms
t_rr
4
Maximum Junction Capacitance at V_R = 0.5V, f = 1MHz
C_j
4
OperatingTemperature Range
T_OPR
- 65 to +150
Storage Temperature Range
T_STG
- 65 to +150
Note : These ratings are limiting values above which the serviceability of the diode may be impaired
UNIT
mW
V
V
V
mA
mA
mA
nA
V
ns
pF
o_C
o_C
Document Number: DS_S1412036
Version: B14